Pulse IMPATT DIODES FROM 30 TO 140 GHz

Insight Product Company offers IMPATT diodes with pulse power up to 20 Watt and operational frequency range up to 140 GHz. Silicon p+-p-n-n+ IMPATT diodes are designed to be used in the millimeter wave oscillators and amplifiers. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).

 

Pulse IMPATT diodes for oscillators and amplifiers:    

Operating frequency range, GHz 30-37 58-62 92-96 120-140
Minimum Power, Watt (50-100 nsec, Q=1000) 5-20 5-15 5-10 3-5
Breakdown voltage, V 34-40 20-26 13-16 10-12
Pulse current, A 8-15 10-15 10-18 10-18
Diode capacitance, pF 10-26 8-12 6-8 6-8
Package capacitance, pF 0.2 0.16 0.12
0.15
0.08
Ruby sleeve dimentions, mm 1.2x0.7x0.4 0.9x0.55x0.3 0.5x0.2x0.15
0.8x0.4x0.2
0.4x0.2x0.15

Text Box: 5.5mm max

Schematic of Si IMPATT diode

*Delivery of diodes in pill packages or with carriers of other types is also possible.
*Delivery of a set of diodes and a test chamber is also possible.

Contact:

E-mail: InsightProduct@yahoo.com
Phone: (617) 965-8151
Fax: (617) 965-2238

 


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