Insight Product Company offers  Microwave Variable-Capacitance Diodes with capacity coverage ratio over 10 times and operating in frequency range from 1 to 40 GHz.  The p+ -n1 - n2 -n+ silicon variable-capacitance diodes are designed to electrically tune frequences and phases of microwave oscillators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.

The packageless gold-beam-lead diode has a superabrupt p+ -n junction and is protected with a high-temperature silicon compound.

Performance:
 
 

Total diode capacitance (at reverse voltage 6V), pF	0.5 - 1.5
Diode capacity coverage ratio ( 0-30V)	>=10
Diode factor-of-merit at frequency 1 GHz and reverse voltage 6V	50-100
Diode lead inductance, nH	<=0.15
Diode operatng frequency, GHz	1-40
Diode limiting reverse voltage, V	30

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