Insight Product Company offers Microwave Switching Diodes with switching time up to 3 nsec and operating in frequency range from 1 to 40 GHz. The p+ -n - n+ silicon spackage-less switching diodes are designed to be used in microwave switching devices, phase changers, modulators, microwave attenuators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
The package-less gold-beam-lead diode is protected with a high-temperature silicon compound.
Protection with silicon organic compound
Flexible gold beam-leads
Microwave Si chip high-speed switching diodes with p+-i-n+ structure are designed to operate in switching devices, phase shifters, modulators, attenuators in frequency range 0.1÷40 GHz. Diodes included in HIC, microcircuits, micro packs and units of radio engineering and electronic equipment are intended for a wide general-purpose industrial application.
Electrical Specification @ +25°C
Absolute Maximum Ratings
* The required total diode capacitance and switching time should be indicated when placing an order.
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