CW IMPATT DIODES FROM 30 TO 140 GHz

Insight Product Company offers  IMPATT diodes with CW power up to 400 mW and operational frequency range up to 140 GHz. Silicon p+-p-n-n+ IMPATT diodes are designed to be used in the millimeter wave oscillators and amplifiers. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).


CW IMPATT diodes for oscillators and amplifiers:

Specifications: 
Operating frequency range, GHz 30-37 58-62 92-96 120-140
Minimum CW power, mW 50-400 50-200 50-150 10-30
Breakdown voltage, V 34-42 24-30 16-18 13-15
Operating current, mA 80-150 100-150 150-200 200-270
Operating voltage, V,  max 10 8 4 4
Diode capacitance, pF 1.3-2.0 0.8-1.2 0.7-0.9 0.6-0.8
Package capacitance, pF 0.2 0.16 0.12
0.15
0.08
Ruby sleeve dimentions, mm 1.2x0.7x0.4 0.9x0.55x0.3 0.5x0.2x0.15
0.8x0.4x0.2
0.4x0.2x0.15

Text Box: 5.5mm max

Schematic of Si IMPATT diode

· *Delivery of diodes in pill packages or with carriers of other types is also possible.
· *Delivery of a set of diodes and a test chamber is also possible.

Contact:

E-mail: InsightProduct@yahoo.com
Phone: (617) 965-8151
Fax: (617) 965-2238


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