| MICROWAVE VARIABLE-CAPACITANCE SILICON PACKAGELESS DIODE |
Insight Product Company offers The p+-n1-n2-n+ silicon variable-capacitance diodes are designed to electrically retune frequencies or phases of microwave oscillators - parts of hybrid microcircuits that provide capsulation and protection against ambient action.
The packageless gold-beam-lead diode has a superabrupt p+-n junction and is protected with high-temperature silicone compound.
Performance:
Total diode capacitance (at a UREV = 6 V), pF |
0.5 to 1.5 |
Diode capacity coverage ratio when changing UREV from 0 to 30 V |
more than or equal to 10 |
Diode factor-of-merit at a frequency of 1 GHz and UREV = 6 V |
50 to 100 |
Diode lead inductance, nH |
less than or equal to 0.15 |
Diode operating frequency range, GHz |
1 to 40 |
Diode limiting reverse voltage, V |
30 |
Contact:
| E-mail: | admin@insight-product.com |
| Phone: | (617) 965-8151 |