Insight Product Company offers  IMPATT diodes with CW power up to 400 mW and operational frequency range up to 140 GHz. Silicon p+-p-n-n+ IMPATT diodes are designed to be used in the millimeter wave oscillators and amplifiers. They are fabricated in the metal-ruby packages with hard-lead carrier (diameter 3.0 mm, 1.5 mm).

CW IMPATT diodes for oscillators and amplifiers:

Specifications: 

Operating frequency range, GHz	30-37	58-62	92-96	120-140
Minimum CW power, mW	50-400	50-200	50-150	10-30
Breakdown voltage, V	34-42	24-30	16-18	13-15
Operating current, mA	80-150	100-150	150-200	200-270
Operating voltage, V,  max	10	8	4	4
Diode capacitance, pF	1.3-2.0	0.8-1.2	0.7-0.9	0.6-0.8
Package capacitance, pF	0.2	0.16	0.12 0.15	0.08
Ruby sleeve dimentions, mm	1.2x0.7x0.4	0.9x0.55x0.3	0.5x0.2x0.15 0.8x0.4x0.2	0.4x0.2x0.15

Schematic of Si IMPATT diode

· *Delivery of diodes in pill packages or with carriers of other types is also possible.
· *Delivery of a set of diodes and a test chamber is also possible.

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